MTU Library Catalogue

Syndetics cover image
Image from Syndetics

Theory of defects in solids : electronic structure of defects in insulators and semiconductors / A. M. Stoneham.

By: Stoneham, A. M.
Material type: materialTypeLabelBookPublisher: Oxford : Oxford University Press, 1975 (1996)Description: xix, 955 p. ; 23 cm. + hbk.ISBN: 0192670204.Subject(s): Energy-band theory of solids | Crystals -- Defects | Electric insulators and insulation | SemiconductorsDDC classification: 548.842
Contents:
I. The perfect solid: Crystals and lattice geometry -- Electronic structure of the perfect lattice -- Lattice dynamics -- II. Electronic structure of isolated defects: Effective-mass theory -- Green's function methods -- Variational methods -- Molecular methods and model calculations -- Lattice distortion for defect systems -- General results -- III. Calculation of observable properties of defects: Optical properties -- Dynamics of imperfect lattices -- External fields and their effects -- Electron-spin resonance -- Non-radiative processes and interaction of free carriers with defects -- IV. Comparison of theory and experiment: The F-centre and related one-carrier systems -- Centres with two carriers -- The R-centre -- The Vk-centre and the relaxed exciton -- The H-centre and other intrinsic interstitials -- Hydrogen in ionic crystals: U-, U1- and U2-centres -- The reorientation of defects in solids -- Transition-metal ions -- Shallow donors and acceptors in semiconductors -- Isoelectronic impurities -- Dipolar systems and donor-acceptor pairs -- Bound excitons -- Vacancies in valence crystals.

Enhanced descriptions from Syndetics:

This is a standard work on defects in solids, an important subject in materials science.

Includes bibliographical references (pages 889-924) and indexes.

I. The perfect solid: Crystals and lattice geometry -- Electronic structure of the perfect lattice -- Lattice dynamics -- II. Electronic structure of isolated defects: Effective-mass theory -- Green's function methods -- Variational methods -- Molecular methods and model calculations -- Lattice distortion for defect systems -- General results -- III. Calculation of observable properties of defects: Optical properties -- Dynamics of imperfect lattices -- External fields and their effects -- Electron-spin resonance -- Non-radiative processes and interaction of free carriers with defects -- IV. Comparison of theory and experiment: The F-centre and related one-carrier systems -- Centres with two carriers -- The R-centre -- The Vk-centre and the relaxed exciton -- The H-centre and other intrinsic interstitials -- Hydrogen in ionic crystals: U-, U1- and U2-centres -- The reorientation of defects in solids -- Transition-metal ions -- Shallow donors and acceptors in semiconductors -- Isoelectronic impurities -- Dipolar systems and donor-acceptor pairs -- Bound excitons -- Vacancies in valence crystals.