Materials science and technology : a comprehensive treatment. vol. 4, Electronic structure and properties of semiconductors / edited by R. W. Cahn, P. Haasen, E. J. Kramer and Wolfgang Schroter.
Contributor(s): Cahn, R. W. (Robert W.)
| Haasen, P. (Peter)
| Kramer, E. J. (Edward J.)
| Schröter, W. (Wolfgang)
.
Material type:
BookSeries: Materials science and technology (New York, N.Y.) ; 14.Publisher: New York : VCH Weinheim, 1991Description: 603 p. : ill ; 25 cm.ISBN: 3527268170 ; 0895736926 .Subject(s): Materials| Item type | Current library | Call number | Copy number | Status | Barcode | |
|---|---|---|---|---|---|---|
| General lending | MTU Bishopstown Library Lending | 620.11 (Browse shelf(Opens below)) | 1 | Available | 00069975 |
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Enhanced descriptions from Syndetics:
Materials Science and Technology A Comprehensive Treatment Edited by R.W. Cahn, P. Haasen, E.J. Kramer The 18-volume series ÂMaterials Science and Technology' is the first in-depth, topic-oriented reference work devoted to this growing interdisciplinary field. A compendium of current, state-of-the-art information, it covers the most important classes of materials: metals, ceramics, glasses, polymers, semiconductors, and composites, from the fundamentals of perfect semiconductors via the physics of defects, to "artifical" and amorphous semiconductors. Edited by internationally renowned figures in materials science, this series is sure to establish itself as a seminal work. Volume 4: This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. Topics included are: band theory applied to semiconductors  optical properties and charge transport  intrinsic point defects in semiconductors  deep centers in semiconductors  equilibria, nonequilibria, diffusion, and precipitation  dislocations  grain boundaries in semiconductors  interfaces  the hall effect in quantum wires  material properties of hydrogenated amorphous silicon  high-temperature properties of three-dimensional transition elements in silicon.
Includes bibliographical references and index.
Band theory applied to semiconductors / M. Lannoo -- Optical properties and charge transport / R. G. Ulbrich -- Intrinsic point defects in semiconductors / G. D. Watkins -- Deep centers in semiconductors / H. Feichtinger -- Equilibria, nonequilibria, diffusion and precipitation / U. M. Gosele, T. Y. Tan -- Dislocations / H. Alexander, H. Teichler -- Grain boundaries in semiconductors / J. Thibault, J. L. Rouviere, A. Bourret -- Interfaces / A. Ourmazd, R. Hull, R. T. Tung -- The hall effect in quantum wires / A. M. Chang -- Material properties of hydrogenated amorphous silicon / R. A. Street, K. Winer -- High-temperature properties of 3d transition elements in silicon / W. Schroter, M. Seibt, D. Gilles.
Table of contents provided by Syndetics
- Band Theory Applied to Semiconductors
- Electrical and Optical Characteristics of Crystalline
- Semiconductors Deep Centers in Semiconductors
- Equilibria, Nonequilibria
- Diffusion and Precipitation
- Dislocation Grain Boundaries Interfaces
- The Hall Effect in Quantum
- Wires Material Properties of Hydrogenated
- Amorphous Silicon Solubility
- Diffusion and Gettering of Illd
- Transition Elements in Silicon